collector-to-base capacitance

См. также в других словарях:

• collector-junction capacitance — kolektoriaus sandūros talpa statusas T sritis radioelektronika atitikmenys: angl. collector junction capacitance vok. Kollektor Basis Kapazität, f rus. ёмкость коллекторного перехода, f pranc. capacité de jonction collecteur base, f …   Radioelektronikos terminų žodynas

• Common base — Figure 1: Basic NPN common base circuit (neglecting biasing details). In electronics, a common base (also known as grounded base) amplifier is one of three basic single stage bipolar junction transistor (BJT) amplifier topologies, typically used… …   Wikipedia

• Parasitic capacitance — In electrical circuits, parasitic capacitance is the unavoidable and usually unwanted capacitance that exists between the parts of an electronic component or circuit simply because of their proximity to each other. All actual circuit elements… …   Wikipedia

• capacité de jonction collecteur-base — kolektoriaus sandūros talpa statusas T sritis radioelektronika atitikmenys: angl. collector junction capacitance vok. Kollektor Basis Kapazität, f rus. ёмкость коллекторного перехода, f pranc. capacité de jonction collecteur base, f …   Radioelektronikos terminų žodynas

• Avalanche transistor — An Avalanche Transistor is a bipolar junction transistor designed for operation in the region of its collector current/collector to emitter voltage characteristics beyond the collector to emitter breakdown voltage, called avalanche breakdown… …   Wikipedia

• Common emitter — Figure 1: Basic NPN common emitter circuit (neglecting biasing details). In electronics, a common emitter amplifier is one of three basic single stage bipolar junction transistor (BJT) amplifier topologies, typically used as a voltage amplifier.… …   Wikipedia

• Common source — Figure 1: Basic N channel JFET common source circuit (neglecting biasing details). Figure 2: Basic N channel JFET common source circuit with source degeneration …   Wikipedia

• ГОСТ 20003-74: Транзисторы биполярные. Термины, определения и буквенные обозначения параметров — Терминология ГОСТ 20003 74: Транзисторы биполярные. Термины, определения и буквенные обозначения параметров оригинал документа: 1 При заданном обратном токе эмиттера в токе коллектора, равном нулю, UЭБ0, UEB0. 2 При заданном токе коллектора и… …   Словарь-справочник терминов нормативно-технической документации

• semiconductor device — ▪ electronics Introduction       electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… …   Universalium

• Operational amplifier — A Signetics μa741 operational amplifier, one of the most successful op amps. An operational amplifier ( op amp ) is a DC coupled high gain electronic voltage amplifier with a differential input and, usually, a single ended output.[1] An op amp… …   Wikipedia

• electronics — /i lek tron iks, ee lek /, n. (used with a sing. v.) the science dealing with the development and application of devices and systems involving the flow of electrons in a vacuum, in gaseous media, and in semiconductors. [1905 10; see ELECTRONIC,… …   Universalium